Part Number Hot Search : 
SK352 HY5RS KSC900 77C032 1702I VISHAY MX7548JN N5257
Product Description
Full Text Search
 

To Download 4N32-X Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 isocom inc 720 e., park boulevard, suite 104, plano, tx 75074 usa tel: (972) 423-5521 fax: (972) 422-4549 30/7/97 db91023-aas/a3 low input current photodarlington optically coupled isolators approvals l ul recognised, file no. e91231 'x' specification approvals l vde 0884 in 2 available lead form : - - std - g form vde 0884 in smd approval pending l en60950 approved by seti, reg. no. 157786-18 4n32x3,-2,-1 4n32-3,-2,-1 description the 4n32-3,-2,-1 series of optically coupled isolators consist of an infrared light emitting diode and npn silicon photodarlington in a space efficient dual in line plastic package. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l low input current 0.25ma i f l high currenttransfer ratio (200% min) l high isolation voltage (5.3kv rms ,7.5kv pk ) l high bv ceo (55v min) l all electrical parameters 100% tested l custom electrical selections available applications l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 80ma reverse voltage 10v power dissipation 105mw output transistor collector-emitter voltage bv ceo 55v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 250mw (derate linearly 3.3mw/ c above 25c) 1 3 2 4 6 5 dimensions in mm 3.3 2.54 6.4 6.2 1.54 8.8 8.4 4.3 4.1 0.5 0.5 0.3 7.8 7.4 9.6 8.4 10.16 0.26 option g 5.08 max. surface mount option sm 1.2 0.6 1.4 0.9 10.2 9.5
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 20ma reverse voltage (v r )10vi r = 10 m a reverse current (i r )10 m av r = 10v output collector-emitter breakdown (bv ceo )55 v i c = 1ma (note 2) collector-base breakdown (bv cbo )55 v i c = 100 m a emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 100 na v ce = 10v coupled current transfer ratio (ctr) (note 2 ) 4n32-3 200 % 0.25ma i f , 1.0v v ce 400 % 0.5ma i f , 1.0v v ce 800 % 1.0ma i f , 1.0v v ce . 4n32-2 400 % 0.5ma i f , 1.0v v ce 800 % 1.0ma i f , 1.0v v ce . 4n32-1 800 % 1.0ma i f , 1.0v v ce . collector-emitter saturation voltage -3 1.0 v 0.25ma i f , 0.5ma i c -2 1.0 v 0.5ma i f , 2ma i c -1 1.0 v 1.0ma i f , 8ma i c input to output isolation voltage v iso 5300 v rms (note 1) 7500 v pk (note 1) input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 60 300 m sv ce = 2v , output fall time tf 53 250 m si c = 10ma, r l = 100 w electrical characteristics ( t a = 25c unless otherwise noted ) note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. db91023-aas/a3 30/7/97
db91023-aas/a3 30/7/97 -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 6 10 0 0.2 0.4 0.6 0.8 1.0 1.2 collector current vs. collector-emitter voltage 0 0.5 1.0 1.5 0 1 2 3 4 5 4 2 8 collector-emitter voltage v ce ( v ) relative current transfer ratio vs. ambient temperature i f = 1ma v ce = 1v -30 0 25 50 75 100 ambient temperature t a ( c ) current transfer ratio vs. forward current forward current i f (ma) current transfer ratio ctr (%) 0 400 600 800 1000 0.1 0.2 0.5 1 2 5 1200 200 v ce = 1v t a = 25 c t a = 25c i f = 1.0ma i f = 0.25ma i f = 1ma i c = 8ma i f = 0.5ma 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 20 0 40 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) 80 100 relative current transfer ratio collector current i c (ma)


▲Up To Search▲   

 
Price & Availability of 4N32-X

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X